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Absolute Maximum Ratings Symbol Parameter 1.
High voltage capability, high speed switching, wide soa, RoHS compliant. Suitable for V circuit mode, fluorescent lamp, electronic ballast. For switching power supply and other power switching circuit. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
A Datasheet, A PDF – Free Datasheets, HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Absolute Maximum Rat 1. Absolute Maximum Ratings Symbol Paramet 1.
Suitable for V circuit mode,fluorescent lamp,electronic ballast. High voltage capability,high speed switching,wide SOA.
13003 Datasheet, Equivalent, Cross Reference Search
High voltage capability,high speed switching,wide soa,RoHS compliant. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin 1. Absolute Maximum Ratings Symbol Par 1. It uses a 1. Features 1 Suitable for RCC circuits. TO, Plastic Package Terminals: Finish – Ma 1. Internal schematic diagram The 1.
It uses a Figure 1 1. Internal schematic diagram multi-epitaxial planar tec 1. Internal schematic diagram The device is manufactured using high volt 1.
A Datasheet, PDF – Alldatasheet
It uses a Figure 1. The UTC E 1. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
The UTC A 1. They are particularly suited for and V applications in switch mode. Characteristic Symbol Ratings Unit Collector-base volta 1.
For AF driver and output stages? High Speed Switching Structure?
Silicon Triple Diffused Type? Package Packing T 1.
MJE13003: 1.5 A, 400 V NPN Bipolar Power Transistor
It uses a Cellular Emitter structure with planar edge termination to enhanc 1. They are particularly suited for and V switchmode applications such as Switching Regulato 1. The transistor is subdivided into one group according to its DC current gain.