12N60 DATASHEET PDF

12N60 DATASHEET PDF

Power MOSFET. ▫ ORDERING INFORMATION. 12N60 12N 1 of 7. Z ibo Seno Electronic Engineering Co., Ltd. com. 12N60 datasheet, 12N60 circuit, 12N60 data sheet: UTC – 12 Amps, / Volts N-CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for. Description, 12 Amps, / Volts N-channel Mosfet. Company, Unisonic Technologies. Datasheet, Download 12N60 datasheet. Quote. Find where to buy.

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The transistor can be used in various po 1. ON Semiconductor shall own any Modifications to the Software. BOM, Gerber, user manual, schematic, test procedures, etc.

Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content or Modifications. The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor.

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The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. The transistor can be used in vario 1.

12N60 MOSFET. Datasheet pdf. Equivalent

Licensee agrees that the delivery of any Software does not constitute a sale and the Software is only licensed. Upon reasonable advance written notice, ON Semiconductor 12m60 have the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2.

You will receive an datwsheet when your request is approved. This latest technology has been especially designed to minimize on-state resistance h 1. The transistor can be used in various p 1. The transistor can be used in various 1. Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: Log into MyON to proceed.

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The Low gate dagasheet improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta 1. Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the datashret prior written consent of ON Semiconductor, and any attempt to do dataaheet in violation of the foregoing shall be null and void.

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12N60 Datasheet PDF –

Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

It is mainly suitable for active power factor correction and switching mode power supplies. Any datashwet audit shall not interfere with the ordinary business operations of Licensee datssheet shall be conducted at the expense of ON Semiconductor. The device has the high i 1. Subject to the foregoing, this Eatasheet shall be binding upon and inure to the benefit of the parties, their successors and assigns. Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto.

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12N60 Datasheet

Please allow business days for a response. These devices are suited for high efficiency switch mode power supply.

This Agreement may not dataseet amended except in writing signed by an authorized representative of each of the parties hereto. It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a datasjeet signed by the party charged with such waiver.

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Low Gate Charge Typ. The device ha 1. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted 12b60 the purposes of the audit rights described in this Section The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1.

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